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Quantum 1/f noise and other low frequency fluctuations in electronic devices seventh symposium : St. Louis, Missouri August 1998 by Van der Ziel Symposium on Quantum 1/f oise and other Low Frequency Fluctuations in Electronic Devices (8th 1998 St. Louis, Mo.)

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Published by AIP Press in Woodbury, N.Y .
Written in English

Subjects:

  • Electronic noise -- Congresses,
  • Quantum electronics -- Congresses,
  • Electromagnetic noise -- Congresses

Book details:

Edition Notes

Statementeditors, Peter H. Handel, Alma L. Chung.
GenreCongresses.
SeriesAIP conference proceedings ;, 466, AIP conference proceedings ;, no. 466.
ContributionsHandel, Peter H., Chung, Alma L., American Institute of Physics.
Classifications
LC ClassificationsTK7867.5 .V35 1998
The Physical Object
Paginationviii, 192 p. :
Number of Pages192
ID Numbers
Open LibraryOL52945M
ISBN 101563968541
LC Control Number99060815
OCLC/WorldCa41246617

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As a result, in a spin valve, the leakage current will show 1/f noise. In devices with injection and subsequent control of spin-polarized electrons, the effects obtained will also show this. Quantum 1/f noise and other low frequency fluctuations in electronic devices. AIP Conference Proceedings, Volume , pp. (). Abstract The 1/f-fluctuations of dark current and photocurrent induced noise in implanted n + p-Hg Cd Te photodiodes are analysed within the diffusion-current-dominated bias region at K. The. This report acknowledges funding for the VI. van der Ziel Symposium on Quantum 1/f Noise and Other Low Frequency Fluctuations in Electronic Devices, which was organized by the author at the. Relations between signals and noise are considered, taking into account parameter fluctuations, the concept of a statistical ensemble, parameter averages, stationary processes, observations, periodic signals, and the structure of noise calculations. Aspects of temperature-limited shot noise are discussed along with power spectra, Johnson noise, noise and statistical mechanics, noise and Cited by:

  The ubiquitous fundamental 1/f noise spectrum is derived ontologically from quantum electrodynamics for any current, cross section or process rate as a universal macroscopic quantum fluctuation process, and as the most important infrared divergence : Peter H. Handel. Quantum 1/f noise is an intrinsic and fundamental part of quantum mechanics (see the debate section below). It allows for the low-noise optimization of materials, devices and systems of most high-technology applications of modern industry and science. The theory includes the conventional and coherent quantum 1/f effects (Q1/fE). quantum 1/f noise in semiconductors involving ionized impurity scattering and various types of electron-phonon scattering. carolyn m. van vliet and ganesh s. kousik. pages f is the frequency and γ ≈ 1 is an experimental parameter) was discovered in vacuum tubes1 and later observed in a diverse array of systems2–5. In electronics, this type of noise, which is com- monly referred to as 1/ f noise, flicker or excess noise, is usually found at f File Size: KB.

The seventh van der ziel symposium on quantum 1/f noise and other low frequency fluctuations in electronic devices. AIP Conference Proceedings, Volume , pp. (). (AIPC Homepage). We investigate the origins and magnitude of low-frequency noise in high-mobility nanocrystal field-effect transistors and show the noise is of 1/f-type. Sub-band gap states, in particular, those introduced by nanocrystal surfaces, have a significant influence on the 1/f noise. By engineering the device geometry and passivating nanocrystal surfaces, we show that in the linear and saturation Cited by: Quantum 1/f noise & other low frequency fluctuations in electronic devices. New York: American Institute of Physics, © (DLC) (OCoLC) Material Type: Conference publication, Document, Internet resource: Document Type: Internet Resource, Computer File: All Authors / Contributors: Peter H Handel; Alma L Chung. Other Titles: Quantum 1/f noise and other low frequency fluctuations in electronic devices symposium: Responsibility: editors, Peter H. Handel, Alma L. Chung.